OREGON STATE UNIVERSITY

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SiO2/InP interface formation: Thermodynamic considerations

TitleSiO2/InP interface formation: Thermodynamic considerations
Publication TypeJournal Article
Year of Publication1980
AuthorsWager, J. F., and C. W. Wilmsen
JournalJournal of Vacuum Science and Technology
Volume17
Issue4
Pagination800
Date Published1980
ISSN00225355
Abstract

Chemical vapor deposited SiO2 has previously been shown to form a useable insulator for InP MIS devices. In this paper possible reactions between Si, SiO, SiO2, O2, and InP and its oxides are investigated by calculation of the change in enthalpy of the reactions. The calculations indicate that no reaction is expected between SiO2 and InP or its oxides. However, both Si and SiO reduce the oxides of In and P. The reaction between InP and Si appears to be weak but possible. The various methods of depositing SiO2 are also examined in order to predict which of these methods is the least likely to cause reaction between the substrate and the depositing species.

DOI10.1116/1.570563
Short TitleJ. Vac. Sci. Technol.