Thermal oxidation of InP

TitleThermal oxidation of InP
Publication TypeJournal Article
Year of Publication1980
AuthorsWager, J. F., and C. W. Wilmsen
JournalJournal of Applied Physics
Volume51
Issue1
Pagination812
Date Published1980
ISSN00218979
Keywordsbinding energy, high temperature, indium oxides, indium phosphides, oxidation, phosphorous oxides, quantity ratio, temperature dependence
Abstract

The growth rate and chemical composition of thermally grown oxides on InP in dry oxygen are presented. The oxide is found to grow very slowly below 340 °C and rapidly above this temperature. All the oxides grown in the temperature range 340–450 °C are composed of approximately 70%–75% In2O3 and 25%–30% P2O5. There is also some evidence for low concentrations of another bonding state of phosphorous.

DOI10.1063/1.327302
Short TitleJ. Appl. Phys.