Thermal degradation of indium-tin-oxide/p-silicon solar cells

TitleThermal degradation of indium-tin-oxide/p-silicon solar cells
Publication TypeJournal Article
Year of Publication1980
AuthorsGoodnick, S. M., J. F. Wager, and C. W. Wilmsen
JournalJournal of Applied Physics
Date Published1980
Keywordsdiffusion, fabrication, indium, interfaces, monocrystals, oxides, oxygen, p-type conductors, polycrystals, silicon, silicon oxide, solar cells, thermal degradation, TIN

Thermal degradation of indium‐tin‐oxide (ITO)/p‐silicon solar cells has been investigated for cells fabricated on both single and polycrystalline silicon. The primary thermal degradation mechanisms was found to be the growth of SiO2 at the ITO/silicon interface resulting from oxygen diffusion through the ITO and not decomposition of the ITO. The degradation rate appears to be limited by surface reaction controlled oxidation since this rate is independent of ITO thickness. The polycrystalline cells were observed to degrade somewhat faster than the single‐crystalline cells. The projected cell life at 50 °C due to thermal failure mechanisms exceeds 105 years for both single‐crystal and polycrystalline cells.

Short TitleJ. Appl. Phys.