Detection of SiO2 at the indium tin oxide/Si solar cell interface

TitleDetection of SiO2 at the indium tin oxide/Si solar cell interface
Publication TypeJournal Article
Year of Publication1979
AuthorsWager, J. F., and C. W. Wilmsen
JournalJournal of Applied Physics
Volume50
Issue6
Pagination4172
Date Published1979
ISSN00218979
Keywordsauger electron spectroscopy, chemical bonds, fabrication, high temperature, indium compounds, interfaces, layers, silicon, silicon oxide, solar cells, thickness, tin oxide
Abstract

Auger analysis has been used to detect thin SiO2 layers at the interface of the ITO/Si solar cell. The energy shift and line‐shape changes of the Si LVV line were used to determine the chemical bonding state of the interfacial Si. An exact determination of the SiO2 thickness was not possible, but it is estimated that the SiO2 layer of the best cell is in the range 12–20 Å. The interfacial SiO2 layers of cells fabricated at 373 °C appear thicker and more completely developed than that of cells fabricated at room temperature.

DOI10.1063/1.326498
Short TitleJ. Appl. Phys.