Auger analysis of ultrathin SiO2 layers on silicon

TitleAuger analysis of ultrathin SiO2 layers on silicon
Publication TypeJournal Article
Year of Publication1979
AuthorsWager, J. F., and C. W. Wilmsen
JournalJournal of Applied Physics
Volume50
Issue2
Pagination874
Date Published1979
ISSN00218979
Keywordsauger electron spectroscopy, crystal-phase transformations, films, interfaces, layers, phase studies, silicon, silicon oxide, thickness
Abstract

The Auger LVV lines of ultrathin SiO2 layers thermally grown on Si are analyzed by comparing the measured lines with lines synthesized from standard SiO2 and Si lines. The synthesized lines were corrected for ion and electron beam effects and charging. The synthesis technique provides quantitative interpretation of the Auger lines in the interfacial region. An apparent thickness‐dependent transition region is observed which can be explained as either a graded SiO2‐Si region or as an abrupt SiO2‐Si transition with a nonuniformly thick oxide. The latter is the more probable.

DOI10.1063/1.326003
Short TitleJ. Appl. Phys.