Atomic Layer Deposited Al2O3/Ta2O5 Nanolaminate Capacitors

TitleAtomic Layer Deposited Al2O3/Ta2O5 Nanolaminate Capacitors
Publication TypeConference Paper
Year of Publication2009
AuthorsSmith, S. W., K. G. McAuliffe, and J. F. Conley
Conference Name2009 International Semiconductor Device Research Symposium (ISDRS)
Pagination1 - 2
Date Published12/2009
PublisherIEEE
Conference LocationCollege Park, MD
ISBN Number978-1-4244-6030-4
Abstract

Nanolaminate dielectric films offer the possibility of tailoring the electrical properties of dielectric stacks for specific applications such as the tunnel dielectric for MIM diodes, storage capacitors, non-volatile memories, and TTFTs. Nanolaminates deposited via ALD have been reported to display properties that are not just a weighted average of the component materials but depend upon the laminate structure as well.

DOI10.1109/ISDRS.2009.5378151