ZnO Nanobridge Devices Fabricated on Carbonized Photoresist

TitleZnO Nanobridge Devices Fabricated on Carbonized Photoresist
Publication TypeConference Paper
Year of Publication2009
AuthorsPelatt, B. D., C. - C. Huang, and J. F. Conley
Conference Name2009 International Semiconductor Device Research Symposium (ISDRS)
Pagination1 - 2
Date Published12/2009
PublisherIEEE
Conference LocationCollege Park, MD
ISBN Number978-1-4244-6030-4
Abstract

The paper presents a novel method of forming electrically integrated ZnO nanobridges in which carbonized photoresist is used as a nucleation layer for selective growth. It has a promising application as nanowire contacts.

DOI10.1109/ISDRS.2009.5378030