OREGON STATE UNIVERSITY

You are here

Directed Integration of ZnO Nanobridge Devices on a Si Substrate

TitleDirected Integration of ZnO Nanobridge Devices on a Si Substrate
Publication TypeJournal Article
Year of Publication2005
AuthorsConley, J. F., L. Stecker, and Y. Ono
JournalApplied Physics Letters
Volume87
Issue22
Pagination223114
Date Published11/2005
ISSN00036951
Keywordsatomic layer deposition (ALD), gas sensors, II-VI semiconductors, nanotechnology, nanowires, semiconductor growth, semiconductor quantum wires, solid-vapour transformations, ultraviolet detectors, zinc compounds
Abstract

We demonstrate the directed assembly and integration of ZnO nanobridges into working devices on silicon-on-insulator substrates. The “pick and place” method of nanowire integration is avoided and metal catalysts are not used. ZnO nanowires (NWs) were grown selectively via a vapor-solid method using a patterned ZnO thin-film seed layer that was deposited on Si trench sidewalls via atomic layer deposition. ZnO NWs grew to span the trench and self-terminate on the opposing surface, effectively forming electrically accessible horizontal ZnO nanobridge devices. Vertical bridge devices were also constructed using undercut islands. Directly grown horizontal ZnO nanobridge devices were operated as gas and UV sensors, demonstrating that this method represents a significant step towards practical large-scale integration of nanodevices into Si microelectronics.

DOI10.1063/1.2136218
Short TitleAppl. Phys. Lett.