Undoped and Chromium-Doped Semi-Insulating GaAs Photoconductive Detectors

TitleUndoped and Chromium-Doped Semi-Insulating GaAs Photoconductive Detectors
Publication TypeJournal Article
Year of Publication1987
AuthorsSchumm, G., and T. K. Plant
JournalSolid-State Electronics
Pagination109 - 112
Date Published01/1987

The effects of optical power, pulse width and temperature on the photoresponse of semi-insulating GaAs photoconductive detectors fabricated on both undoped and chromium-doped substrates have been investigated. Devices on both types of substrates show no increase in photocurrent with pulse width but do show increases of up to 160 times in photoresponse as the temperature is lowered below 120K. Both types of detectors showed a linear response of photocurrent to incident optical power. This behavior is discussed in terms of the deep-level traps Cr and EL2 interacting with the quasi-Fermi levels of the illuminated detector.

Short TitleSolid-State Electronics