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Wang, B., J. S. Suehle, E. M. Vogel, J. F. Conley, C. E. Weintraub, A. H. Johnston, and J. B. Bernstein, "Latent reliability degradation of ultra-thin oxides after heavy ion and γ-ray irradiation", IEEE 2001 International Integrated Reliability Workshop (IRW), Lake Tahoe, CA, IEEE, pp. 16 - 19, 10/2001.
Conley, J. F., P. M. Lenahan, and W. F. McArthur, "First-Order Defect Precursor Formation Kinetics for a Predictive Model of Oxide Charging", Journal of Radiation Effects, Research, and Engineering, vol. 18, 2000.
Milanowski, R. J., M. P. Pagey, L. W. Massengill, J. F. Conley, R. D. Schrimpf, and K. F. Galloway, "Transient Simulation of Radiation-Induced Charge Trapping and Interface Trap Formation Using a Three-Carrier Transport Model for Silicon Dioxide", Journal of Radiation Effects, Research, and Engineering, vol. 18, 2000.
Nicklaw, C. J., M. P. Pagey, S. T. Pantelides, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, J. E. Wittig, B. M. Howard, E. Taw, W. H. McNeil, et al., "Defects and nanocrystals generated by Si implantation into a-SiO/sub 2/", IEEE Transactions on Nuclear Science, vol. 47, issue 6, pp. 2269 - 2275, 12/2000.
Suehle, J. S., T. Meyers, and J. F. Conley, "The Effects of Ionizing Radiation on Wear-Out and Reliability of Thin Gate Oxides", 2000 IEEE Microelectronics and Reliability and Qualification Workshop, 11/2000.
McNeil, W., J. F. Conley, and H. Walker, "2-D Imaging of Trapped Charge in SiO2 Using Kelvin Probe Force Microscopy", 2000 IEEE International SOI Conference, Wakefield, MA, IEEE, pp. 38 - 39, 10/2000.