ECE 317- Electronic Materials and Devices
Catalog Description: Semiconductor fundamentals, mathematical models,
PN junction operation and device characteristics.
Prerequisites:
By course: ENGR 201 or equivalent
By topic: none
Courses that require this as a prerequisite: ECE 322, ECE 417 and ECE
418
Credits: 3 Terms Offered: Fall
Instructors:
Primary: S. Subramanian
Secondary: T. Plant
Textbook: Semiconductor Device Fundamentals, R.F. Pierret, Addison Wesley,
1996. ISBN: 0-201-54393-1.
Course Learning Objectives:
The student will demonstrate the ability to:
- Calculate the carrier concentrations and resistivity of a semiconductor
using the given doping concentration and design a resistor of a given value.
(ABET outcomes a,c)
- Draw the energy band diagram of a p-n junction diode and extract its SPICE
model parameters from the given current-voltage (I-V) and capacitance-voltage
(C-V) data and relate the SPICE model parameters to the physical parameters
of the device. (ABET outcomes a,b,k)
- Identify the accumulation, depletion and inversion regimes on a MOS capacitor
using its C-V curve and calculate the threshold voltage of a MOSFET from the
given physical parameters. (ABET outcome a)
- Identify the four modes of operation of a bipolar junction transistor.
(ABET outcome a)
Topics
- Semiconductor Fundamentals- Bond model and energy band model of a semiconductor,
doping, carrier concentrations, mobility and resistivity of a semiconductor.
- P-n junctions - fabrication, built-in voltage, electrostatics, capacitance-voltage
(C-V) and current-voltage (I-V) characteristics of a p-n junction diode and
their SPICE models.
- MOS capacitors and MOSFETs - Accumulation, depletion and strong inversion
in MOS capacitors, MOS C-V curves, threshold voltage and MOSFET I-V characteristics
- Bipolar transistors - Basic principle of operation and four modes of operation
of the device.
Structure: Three 50-minute lectures per week.
Original: 9/00
Revised: 9/01