ECE 322- Electronics - I

Catalog Description: Fundamental device characteristics including diodes, MOSFETs and bipolar transistors; small- and large-signal characteristics and design of linear circuits.

Prerequisites:

By course: ECE 317
By topic: Semiconductor devices

Courses that require this as a prerequisite: ECE 323

Credits: 4 Terms Offered: Winter annually

Instructors:

Primary: K. Mayaram
Secondary: U. Moon

Textbook: Microelectronic Circuits, A. Sedra and K. C. Smith, Oxford University Press, Fourth Edition, 1998, ISBN 0-19-511663-1.

References: SPICE for Microelectronic Circuits, G. W. Roberts and A. Sedra, Oxford University Press, Second Edition, 1997, ISBN 0-19-510842-6.

Course Learning Objectives:
Students are expected to demonstrate the ability to:

1. Describe the operation of diodes, BJTs and MOSFETs. (ABET Outcome a)
2. Explain the concepts of large- and small-signal analyses. (ABET Outcome a)
3. Analyze and design basic amplifier configurations. (ABET Outcomes a, c)
4. Analyze and design various Opamp configurations. (ABET Outcomes a, c)
5. Use basic commands in the circuit simulator SPICE for analysis of electronic circuits. (ABET Outcomes a, b, k)
6. Use basic electronic test equipment and components to implement hardware experiments. (ABET Outcomes b, k)

Topics

• Introduction to electronics.
• Diodes: small-signal model, applications.
• BJTs: biasing, small-signal model.
• BJT single-stage amplifiers: analysis and design.
• BJT current mirrors.
• MOSFETs: biasing, small-signal model.
• MOSFET single-stage amplifiers: analysis and design.
• MOSFET current mirrors.
• Operational amplifiers.

Laboratory Projects

• Diodes.
• Bipolar junction transistors.
• Field effect transistors.
• FET amplifier and SPICE usage.
• Basic Opamp circuits.
• Opamp filter design.

Structure: Three 50-minute lectures per week. One 3-hour lab per week.

Original: 1/01
Revised: 9/01