ECE 417-Basic Semiconductor Devices

Catalog Description: Theory of PN and Schottky junctions; MOSFET, MESFET, JFET, and bipolar transistors.

Prerequisites:

By course: ECE 317
By topic: Energy band diagrams, Semiconductors in equilibrium, Nonequilibrium conditions in semiconductors, pn junction operation, pn junction current-voltage characteristics, Basic transistor operation

Courses that require this as a prerequisite: no undergraduate courses

Credits: 3 Terms Offered: Fall

Instructors:

Primary: J. Wager
Secondary: M. Subramanian

Textbook: R. F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley, 1996, ISBN 0-201-54393-1

References: none

Course Learning Objectives:
Students are expected to demonstrate the ability to:

1. Analyze pn junction, bipolar transistor, and MOSFET operation using energy band diagrams. (ABET Outcomes a, e, m)
2. Qualitative and quantitative assessment of the electrostatics of one-dimensional semiconductor devices. (ABET Outcomes a, e, m)
3. Employ current-voltage (I-V) and capacitance-voltage (C-V) characteristics in the assessment of pn junctions, bipolar transistors, and MOSFETs. (ABET Outcomes a, e, m)
4. Prepare two reports on projects involving the design / analysis of semiconductor devices using computer-aided design tools. (ABET Outcomes a, c, e, g, k, m)

Topics

• Semiconductor Fundamentals
• PN Junctions
• BJTs
• FETs

Structure: Two one hour and twenty minute lectures per week.

Original: 9/00
Revised: