ECE 418- Semiconductor Processing
Catalog Description: Theory and practice of basic semiconductor processing
techniques. Introduction to process simulation.
Prerequisites:
By course: ECE317
By topic: Basic principles and operation of MOS capacitors, Basic principles
and operation of MOS transistors.
Courses that require this as a prerequisite: None
Credits: 3 Terms Offered: Spring
Instructors:
Primary: S. Subramanian
Secondary: J. Wager
Textbook: Introduction to Microelectronic Fabrication, Volume V, Modular
Series on Solid State Devices, Richard C. Jeager, Addison Wesley, 1988. ISBN:
0-201-14695-9.
References: Semiconductor Integrated Circuit Processing Technology,
W.R. Runyan and K.E. Bean, Addison Wesley, 1990. ISBN: 0-201-10831-3.
Course Learning Objectives:
The student will demonstrate the ability to:
- Design and perform dry and wet oxidation of silicon wafers in the laboratory
and calculate the expected thickness of the oxide from the process conditions.
(ABET outcomes a,b,c)
- Fabricate Al gate MOS capacitors on silicon wafers in the laboratory and
perform capacitance-voltage (C-V) measurements (ABET outcomes a,b)
- Determine the substrate type and calculate the doping concentration in the
substrate, flat band voltage, threshold voltage and the oxide charge form
the measured C-V curves. (ABET outcomes a,b)
- Design and perform a two step diffusion process in the laboratory and calculate
the junction depth and sheet resistance of the diffused layer from the process
conditions. (ABET outcomes a,b,c)
- Fabricate a simple MOS transistor (gate length ~ 10 mm) using a four stage
photolithography process and measure the current - voltage (I-V) characteristics.
Determine the threshold voltage and the transconductance from the measured
I-V curves. (ABET outcomes a,b)
- Write a simple SUPREM3 program to determine the oxide thickness, junction
depth and sheet resistance of diffused or ion-implanted layers. (ABET outcome
k)
- Prepare two reports on projects involving fabrications and characterizations
of MOS capacitors and transistors. (ABET Outcome g)
Topics
- Introduction to semiconductor processing, SUPREM process modeling, Thermal
oxidation of silicon and oxide characterization
- Diffusion and Ion implantation
- Photolithography, Thin film deposition and etching
- MOS and Bipolar Process integration
Laboratory Projects
- MOS capacitor fabrication and characterization
- MOS transistor fabrication and characterization
Structure: One 1 hour and 20 minute lecture every week. Two 3 hour and
20 minute labs every week.
Original: 4/01
Revised: 9/01