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Binary Access Memory: An optimized lookup table for successive approximation applications

TitleBinary Access Memory: An optimized lookup table for successive approximation applications
Publication TypeConference Paper
Year of Publication2011
AuthorsHershberg, B. P., S. T. Weaver, S. Takeuchi, K. Hamashita, and U. Moon
Conference Name2011 IEEE International Symposium on Circuits and Systems (ISCAS)
Pagination1620 - 1623
Date Published05/2011
PublisherIEEE
Conference LocationRio de Janeiro, Brazil
ISBN Number978-1-4244-9473-6
Abstract

An optimized memory structure, Binary Access Memory (BAM), is presented for successive approximation applications that employ an error correction lookup table. Unlike true random-access memory, the probability of different codes occurring in a binary successive approximation access pattern is not uniformly distributed. BAM exploits this fact in several ways to reduce the number of sub-block switches, the average and worst-case access latency, and power consumption compared to a conventional SRAM lookup table. A simple technique for using BAM in an asynchronous successive approximation design is also presented.

DOI10.1109/ISCAS.2011.5937889