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Bipolar resistive switching of zinc-tin-oxide resistive random access memory

TitleBipolar resistive switching of zinc-tin-oxide resistive random access memory
Publication TypeConference Paper
Year of Publication2011
AuthorsMurali, S., J S. Rajachidambaram, S-Y. Han, C-H. Chang, G. S. Herman, and J. F. Conley
Conference NameIEEE 11th International Conference on Nanotechnology (IEEE-NANO)
Pagination740 - 743
Date Published08/2011
PublisherIEEE
Conference LocationPortland, OR
ISBN Number978-1-4577-1515-0
Abstract

Bipolar switching is reported for the first time using solution deposited amorphous zinc-tin-oxide (ZTO). The impact of compliance current (CC) on the SET voltage, the magnitude of the low and high resistance states, and the switching ratio is investigated for Al/ZTO/Ir resistive random access memory (RRAM) devices.

DOI10.1109/NANO.2011.6144646