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Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes

TitleSensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes
Publication TypeConference Paper
Year of Publication2009
AuthorsJander, A., and P. Dhagat
Conference NameInternational Semiconductor Device Research Symposium (ISDRS 2009)
Pagination1 - 2
Date Published11/2009
PublisherIEEE
Conference LocationCollege Park, MD
ISBN Number978-1-4244-6030-4
Abstract

This paper presents an analysis of the ultimate magnetic field sensitivity that could be achieved in a sensor utilizing spin-dependent recombination (SDR) in silicon diodes.

DOI10.1109/ISDRS.2009.5378121