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Noninvasive nature of corona charging on thermal Si∕SiO[sub 2] structures

TitleNoninvasive nature of corona charging on thermal Si∕SiO[sub 2] structures
Publication TypeJournal Article
Year of Publication2004
AuthorsDautrich, M. S., P. M. Lenahan, A. Y. Kang, and J. F. Conley
JournalApplied Physics Letters
Volume85
Issue10
Pagination1844-1845
Date Published09/2004
ISSN00036951
Abstract

The corona charging technique is widely utilized in commercial Si∕SiO₂ semiconductor device reliability characterization tools and has been used in numerous electron spin resonance (ESR) experiments, by several groups to study defect centers in Si∕SiO₂ system. A recent ESR study argued that the corona charging approaches are inherently unreliable and invasive. In this work we show that this is not the case. We find that low-field corona biasing is essentially noninvasive and thus can be utilized in both reliability characterization and fundamental studies of defect structures.

DOI10.1063/1.1789576
Short TitleAppl. Phys. Lett.