OREGON STATE UNIVERSITY

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Tin oxide transparent thin-film transistors

TitleTin oxide transparent thin-film transistors
Publication TypeJournal Article
Year of Publication2004
AuthorsPresley, R. E., C. L. Munsee, C. - H. Park, D. Hong, J. F. Wager, and D. A. Keszler
JournalJournal of Physics D: Applied Physics
Volume37
Issue20
Pagination2810 - 2813
Date Published10/2004
ISSN1361-6463
Abstract

A SnO₂ transparent thin-film transistor (TTFT) is demonstrated. The SnO₂ channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O₂ at 600°C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm² V-¹ s-¹ and 2.0 cm² V-¹ s-¹ are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10⁵ associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications.

DOI10.1088/0022-3727/37/20/006
Short TitleJ. Phys. D: Appl. Phys.