OREGON STATE UNIVERSITY

You are here

SiO2/InP interfaces with reduced interface state density

TitleSiO2/InP interfaces with reduced interface state density
Publication TypeJournal Article
Year of Publication1984
AuthorsWager, J. F., M. D. Clark, and R. A. Jullens
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume2
Issue3
Pagination584
Date Published1984
ISSN0734211X
Keywordschemical vapor deposition, CV characteristic, indium phosphides, interface states, interface structure, methanol, MIS junctions, potassium hydroxides, sample preparation, silica, surface contamination, traps
Abstract

By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma‚Äźenhanced chemically vapor deposited SiO₂/InP structures has been significantly reduced. Capacitance-voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be associated with the formation of a p-type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In₂O₃ and is contaminated with K.

DOI10.1116/1.582843
Short TitleJ. Vac. Sci. Technol. B