SiO2/InP interfaces with reduced interface state density

TitleSiO2/InP interfaces with reduced interface state density
Publication TypeJournal Article
Year of Publication1984
AuthorsWager, J. F., M. D. Clark, and R. A. Jullens
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Date Published1984
Keywordschemical vapor deposition, CV characteristic, indium phosphides, interface states, interface structure, methanol, MIS junctions, potassium hydroxides, sample preparation, silica, surface contamination, traps

By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma‐enhanced chemically vapor deposited SiO₂/InP structures has been significantly reduced. Capacitance-voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be associated with the formation of a p-type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In₂O₃ and is contaminated with K.

Short TitleJ. Vac. Sci. Technol. B