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Surface and interface analysis of GaAs–oxyfluorides

TitleSurface and interface analysis of GaAs–oxyfluorides
Publication TypeJournal Article
Year of Publication1983
AuthorsIreland, P. J., O. Jamjoum, L. L. Kazmerski, R. K. Ahrenkiel, P. E. Russell, W. Stanchina, and J. F. Wager
JournalJournal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Date Published1983
Keywordsannealing, arsenic compounds, arsenic oxides, auger electron spectroscopy, chemical composition, films, fluorine, fluorine oxides, gallium arsenides, gallium oxides, interfaces, ion microprobe analysis, layers, mass spectroscopy, oxidation, oxyfluorides, passivation, photoelectron spectroscopy, sputtering, surfaces, x radiation

AES, XPS, and SIMS analysis of the plasma grown oxyfluorides on GaAs are presented. These data indicate that the films are composed of three basic layers. Region 1 is a mixed As₂O₃, Ga₂O₃ glass with low concentrations of fluorine. In the second region, fluorine concentrations increase and a shoulder on the As‐3d and Ga‐3d peaks are observed. As₂O₃ and Ga₂O₃ are still the major constituents of the film. At the interface between the oxyfluoride glass and the substrate is a thin metallic As region. The difference between pure oxides and this oxyfluoride is the incorporation of fluorine in the films and lower concentrations of metallic As at the interface.

Short TitleJ. Vac. Sci. Technol. A