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Magnetic Resonance Studies of Trapping Centers in High-κ Dielectric Films on Silicon

TitleMagnetic Resonance Studies of Trapping Centers in High-κ Dielectric Films on Silicon
Publication TypeJournal Article
Year of Publication2005
AuthorsLenahan, P. M., and J. F. Conley
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue1
Pagination90 - 102
Date Published03/2005
ISSN1530-4388
Keywordsdefects, electron paramagnetic resonance (EPR), electron spin resonance (ESR), gate insulator, high dielectric constant, MOS, reliability, trapping
Abstract

The electrical properties of high dielectric constant materials being considered for replacements of SiO2 in metal-oxide semiconductor (MOS) field effect transistors are dominated by point defects. These point defects play important roles in determining the response of these films in almost any imaginable reliability problem. A fundamental understanding of these defects may help to alleviate the problems which they can cause. The best known methods for determining the structure of electrically active defects in MOS materials and devices are conventional electron spin resonance (ESR) and electrically detected magnetic resonance (EDMR). In this paper, we review the limited ESR and EDMR work performed to date on high-κ materials. A discussion of magnetic resonance techniques as well as a brief overview of the extensively studied Si/SiO2 system is also included.

DOI10.1109/TDMR.2005.845475
Short TitleIEEE Trans. Device Mater. Relib.