InP/InGaAs Double Heterostructure Bipolar Transistors Grown by MBE

TitleInP/InGaAs Double Heterostructure Bipolar Transistors Grown by MBE
Publication TypeJournal Article
Year of Publication1986
AuthorsSchuitemaker, P., P. A. Claxton, J. S. Roberts, T. K. Plant, and P. A. Houston
JournalElectronics Letters
Volume22
Issue15
Pagination781-783
Date Published1986
ISSN00135194
Abstract

Double heterostructure bipolar transistors have been fabricated on InP/InGaAs MBE material. Current gains of up to 80 have been observed in the emitter-up configuration. The devices were fabricated using two diffusion techniques and selective etching to contact the base.

DOI10.1049/el:19860536
Short TitleElectron. Lett.