Correlation of telegraph noise between parallel and antiparallel states of magnetic tunnel junctions

TitleCorrelation of telegraph noise between parallel and antiparallel states of magnetic tunnel junctions
Publication TypeJournal Article
Year of Publication2005
AuthorsDhagat, P., A. Jander, and C. A. Nordman
JournalJournal of Applied Physics
Volume97
Issue10
Pagination10C911-10C911-3
Date Published2005
ISSN00218979
KeywordsBarkhausen and related effects, domain-motion devices, hysteresis, magnetic heads, magnetic properties of interfaces, magnetic thin film devices, magnetization curves, metals and alloys, noise processes and phenomena
Abstract

An alternating positive and negative saturating field is applied to near simultaneously observe the resistance of a magnetic tunnel junction in its parallel and antiparallel configuration. The random telegraph noise in the two configurations is found to be correlated in some devices and anticorrelated in others. These measurements provide insight into the noise mechanism and show that the noise cannot accurately be modeled as purely additive.

DOI10.1063/1.1851952
Short TitleJ. Appl. Phys.