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John F. Wager
Yeh, B., and J. F. Wager, "Interface state estimation of thin-film transistors with amorphous oxide semiconductor channel layers", J. Appl. Phys, In Press.
Wager, J. F., K. Hoshino, E. S. Sundholm, R. E. Presley, R. Ravichandran, C. C. Knutson, D. A. Keszler, R. L. Hoffman, D. A. Mourey, and J. Robertson, "A framework for assessing amorphous oxide semiconductor thin-film transistor passivation", Journal of the Society for Information Display, vol. 20, issue 10, pp. 589 - 595, 10/2012.
Best paper of 2012 for the Journal of Information Display
Alimardani, N., W. E. Cowell, J. F. Wager, J. F. Conley, D. R. Evans, M. Chin, S. J. Kilpatrick, and M. Dubey, "Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, issue 1, pp. 01A113, 01/2012.
Wager, J. F., and J. Robertson, "Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer", Journal of Applied Physics, vol. 109, issue 9, pp. 094501, 2011.
Waggoner, T., J. Triska, K. Hoshino, J. F. Wager, and J. F. Conley, "Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 29, issue 4, pp. 04D115, 07/2011.
Wager, J. F., and R. L. Hoffman, "Thin, Fast, and Flexible: amorphous oxide semiconductors promise to makes flat-panel displays faster and sharper than today’s silicon standby", IEEE Spectrum, pp. 42-45, 51-56, 05/2011.
Wager, J. F., "Transfer-curve assessment of oxide thin-film transistors", Journal of the Society for Information Display, vol. 18, issue 10, pp. 749–752, 10/2010.
Hoshino, K., and J. F. Wager, "Operating Temperature Trends in Amorphous In–Ga–Zn–O Thin-Film Transistors", IEEE Electron Device Letters, vol. 31, issue 8, pp. 818 - 820, 08/2010.
Triska, J., J. F. Conley, R. E. Presley, and J. F. Wager, "Bias stress stability of zinc-tin-oxide thin-film transistors with Al2O3 gate dielectrics", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 28, issue 4, pp. C5I1, 07/2010.
Triska, J., J. F. Conley, R. Presley, and J. F. Wager, "Bias Stability of Zinc-Tin-Oxide Thin Film Transistors with Al2O3 Gate Dielectrics", IEEE International Integrated Reliability Workshop (IRW), South Lake Tahoe, CA, IEEE, pp. 86 - 89, 10/2009.